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| CLT135 NPN Silicon Phototransistor 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.190 (4.83) 0.176 (4.47) (R) Clairex 0.215 (5.46) 0.205 (5.21) Technologies, Inc. July, 2001 COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.060 (1.52) max 0.025 (0.64) max 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) Case 17 features absolute maximum ratings (TA = 25C unless otherwise stated) storage temperature ...................................................................... -65C to +150C * high sensitivity operating temperature ................................................................... -65C to +125C * 9 acceptance angle lead soldering temperature(1) ......................................................................... 260C * custom aspheric lensed TO-18 collector-emitter voltage..................................................................................... 30V package continuous collector current ............................................................................ 50mA * transistor base is not bonded (2) * tested and characterized at 940nm continuous power dissipation .................................................................... 250mW * usable throughout visible and near notes: infrared spectrum 1. 0.06" (1.5mm) from the header for 5 seconds maximum * RoHS compliant 2. Derate linearly 2.0mW/C from 25C free air temperature to TA = +125C. description The CLT135 is an NPN silicon phototransistor mounted in a TO-18 package which features a custom double convex glass-to-metal sealed aspheric lens. Narrow acceptance angle enables excellent on-axis coupling. The CLT135 is spectrally and mechanically matched to the CLE135 IRED. For additional information, call Clairex. electrical characteristics (TA = 25C unless otherwise noted) symbol parameter Light current(3) Collector dark current Collector-emitter breakdown Output rise and fall time Total angle at half sensitivity points min typ max units mA nA V s deg. test conditions VCE = 5V, Ee = 0.5mW/cm2 VCE = 10V, Ee = 0 IC = 100A IC = 1.0mA, VCE=5V, RL=100. IL ICEO V(BR)CEO tr, tf HP 1.0 30 - 2.5 3.0 18 25 - notes: 3. Radiation source is an aluminum gallium arsenide IRED operating at a peak emission wavelength of 940nm Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 3/16/06 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com |
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